APT60M75JVR |
RFQ for APT60M75JVR Required Field |
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| Technical/Catalog Information | APT60M75JVR |
| Vendor | Microsemi-PPG |
| Category | Discrete Semiconductor Products |
| Mounting Type | Chassis Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 62A |
| Rds On (Max) @ Id, Vgs | 75 mOhm @ 500mA, 10V |
| Input Capacitance (Ciss) @ Vds | 19800pF @ 25V |
| Power - Max | 700W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 1050nC @ 10V |
| Package / Case | SOT-227 |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | APT60M75JVR APT60M75JVR |
| Product | Manufacturers | Pack | D/C |
| APT60M75JVR | - | MODULE | N/A |
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
Features |
| • Faster Switching • 100% Avalanche Tested• Lower Leakage • Popular SOT-227 Package |
| Symbol | Parameter |
APT60M75JVR |
UNIT |
| VDSS | Drain-Source Voltage |
600 |
Volts |
| ID | Continuous Drain Current @ TC = 25 |
62 |
Amps |
| IDM | Pulsed Drain Current |
248 | |
| VGS | Gate-Source Voltage |
±30 |
Volts |
| VGSM | Gate-Source Voltage Transient |
±40 | |
| PD | Total Power Dissipation @ TC = 25 |
700 |
Watts |
| Linear Derating Factor |
5.6 |
W/ | |
| TJ,TSTG | Operating and StorageTemperature Range |
-55 to 150 |
|
| TL | Lead Temperature: 0.063" from Case for 10 Sec. |
300 | |
| IAR | Avalanche Current(Repetitive and Non-epetitive) |
62 |
Amps |
| EAR | Repetitive Avalanche Energy |
50 |
mJ |
| EAS | Single Pulse Avalanche Energy |
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